TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 600 V |
Current Rating | 31.0 A |
Case/Package | TO-247-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 99 mΩ |
Polarity | N-Channel |
Power Dissipation | 255 W |
Threshold Voltage | 3 V |
Input Capacitance | 2.80 nF |
Gate Charge | 80.0 nC |
Drain to Source Voltage (Vds) | 650 V |
Continuous Drain Current (Ids) | 31.0 A |
Rise Time | 5 ns |
Input Capacitance (Ciss) | 2800pF @100V(Vds) |
Input Power (Max) | 255 W |
Fall Time | 5 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 255W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended |
Packaging | Tube |
Size-Length | 16.13 mm |
Size-Width | 5.21 mm |
Size-Height | 21.1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 600V 31A (Tc) 255W (Tc) Through Hole PG-TO247-3-1
Infineon
11 Pages / 0.63 MByte
Infineon
10 Pages / 0.3 MByte
Infineon
Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-3
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