| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 25.0 A |
| Case/Package | TO-247-3 |
| Power Rating | 208 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.11 Ω |
| Polarity | N-Channel |
| Power Dissipation | 208 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 2.50 nF |
| Gate Charge | 70.0 nC |
| Drain to Source Voltage (Vds) | 650 V |
| Continuous Drain Current (Ids) | 25.0 A |
| Rise Time | 5 ns |
| Input Capacitance (Ciss) | 2500pF @100V(Vds) |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 208 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.13 mm |
| Size-Width | 5.21 mm |
| Size-Height | 21.1 mm |
The IPW60R125CP is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard switching topologies, server and telecom applications.
● Low figure-of-merit(FOM) RON x Qg
● Extreme dV/dt rated
● High peak current capability
● Qualified according to JEDEC for target applications
● Very fast switching
● High current capability
● Significant reduction of conduction and switching losses
● High power density and efficiency for superior power conversion systems
● Best-in-class performance ratio
Infineon
11 Pages / 0.65 MByte
Infineon
11 Pages / 0.65 MByte
Infineon
37 Pages / 2.01 MByte
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