TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Dissipation | 300 W |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Reverse recovery time | 300 ns |
Input Power (Max) | 300 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Bulk |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 1200V 60A 300W Through Hole TO-247AC
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13 Pages / 0.28 MByte
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Trans IGBT Chip N-CH 1200V 60A 300000mW 3Pin(3+Tab) TO-247AD Tube
International Rectifier
Trans IGBT Chip N-CH 1200V 60A 300000mW 3Pin(3+Tab) TO-247AD Tube
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Trans IGBT Chip N-CH 1.2kV 60A 3Pin (3+Tab) TO-247AD
Infineon
IGBT 1200V 60A 300W TO247AC
International Rectifier
IGBT 1200V 60A 300W TO247AC
Infineon
Trans IGBT Chip N-CH 1200V 60A 300000mW 3Pin(3+Tab) TO-247AD Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 60A 3Pin (3+Tab) TO-247AD
IRF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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