TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Rating | 500 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.037 Ω |
Polarity | N-Channel |
Power Dissipation | 500 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 700 V |
Breakdown Voltage (Drain to Source) | 650 V |
Continuous Drain Current (Ids) | 68.5A |
Rise Time | 28 ns |
Input Capacitance (Ciss) | 8400pF @100V(Vds) |
Fall Time | 8 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 500 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 16.13 mm |
Size-Width | 5.21 mm |
Size-Height | 21.1 mm |
The IPW65R041CFD is a 650V N-channel CoolMOS™ Power MOSFET with integrated fast body diode and improved energy efficiency. The softer commutation behaviour and therefore better EMI behaviour gives this MOSFET a clear advantage. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
● Limited voltage overshoot during hard commutation
● Easy to design in
● Low switching losses due to low Qrr at repetitive commutation on body diode
● Self limiting di/dt and dv/dt
● Low Qoss
● Reduced turn on and turn off delay times
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