IPW65R190C7XKSA1 Datasheet PDF - Infineon

The IPW65R190C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.

● Revolutionary best-in-class RDS (ON)

● Reduced energy stored in output capacitance (EOSS)

● Space saving through use of smaller packages or reduction of parts

● Improved safety margin and suitable for both SMPS and Solar Inverter applications

● Lowest conduction losses

● Low switching losses

● Better light load efficiency

● Increasing power density

● Outstanding CoolMOS™ quality

●For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.