| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.1 Ω |
| Polarity | N-Channel |
| Power Dissipation | 417 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 900 V |
| Continuous Drain Current (Ids) | 36.0 A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 6800pF @100V(Vds) |
| Input Power (Max) | 417 W |
| Fall Time | 24 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 417W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.13 mm |
| Size-Width | 5.21 mm |
| Size-Height | 21.1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IPW90R120C3 is a 600V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
● Very low energy storage in output capacitance (Eoss) at 400V
● Low gate charge (Qg)
● High efficiency and power density
● Outstanding performance
● High reliability
● Easy to use
Infineon
5 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
38 Pages / 0.73 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
1 Pages / 0.13 MByte
Infineon
900V CoolMOS™ C3 is Infineon"s third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio.
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