| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-204 |
| Number of Positions | 2 Position |
| Drain to Source Resistance (on) (Rds) | 0.18 Ω |
| Power Dissipation | 75 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 100 V |
| Rise Time | 80 ns |
| Input Capacitance (Ciss) | 650pF @25V(Vds) |
| Fall Time | 45 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 75000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Operating Temperature | -55℃ ~ 150℃ |
The IRF130 is a 100V single N-channel HEXFET® MOSFET hermetically sealed with extremely low on-resistance with high transconductance, superior reverse energy and diode recovery dv/dt capability using Hi-Rel technology.
● Simple drive requirement
● Repetitive avalanche rating
● Easy to parallel
Infineon
7 Pages / 0.14 MByte
Infineon
10 Pages / 0.51 MByte
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