| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 160 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.036 Ω |
| Polarity | N-Channel |
| Power Dissipation | 170 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 42A |
| Rise Time | 56 ns |
| Input Capacitance (Ciss) | 1900pF @25V(Vds) |
| Input Power (Max) | 160 W |
| Fall Time | 40 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 160W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.54 mm |
| Size-Width | 4.69 mm |
| Size-Height | 8.77 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF1310NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Dynamic dV/dt rating
● Fully avalanche rated
Infineon
10 Pages / 0.59 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.036Ω; ID 42A; TO-220AB; PD 160W; VGS +/-20V
International Rectifier
Trans MOSFET N-CH 100V 42A 3Pin(2+Tab) D2PAK T/R
International Rectifier
Trans MOSFET N-CH 100V 42A 3Pin(2+Tab) D2PAK T/R
International Rectifier
Trans MOSFET N-CH 100V 42A 3Pin (3+Tab) TO-220AB
International Rectifier
MOSFET N-CH 100V 42A TO-262
International Rectifier
Trans MOSFET N-CH 100V 42A 3Pin (2+Tab) D2PAK T/R
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
