TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Rating | 360 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.029 Ω |
Polarity | N-CH |
Power Dissipation | 120 mW |
Threshold Voltage | 5 V |
Input Capacitance | 5860 pF |
Drain to Source Voltage (Vds) | 250 V |
Continuous Drain Current (Ids) | 57A |
Input Capacitance (Ciss) | 5860pF @25V(Vds) |
Input Power (Max) | 360 W |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 360W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 15.87 mm |
Size-Width | 5.3 mm |
Size-Height | 20.3 mm |
Operating Temperature | -40℃ ~ 175℃ (TJ) |
The IRFP4332PBF is a HEXFET® single N-channel PDP switch Power MOSFET specifically designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. It combines to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
● Advanced process technology
● Low EPULSE rating to reduce power dissipation
● Low Qg for fast response
● High repetitive peak current capability for reliable operation
● Short fall and rise times for fast switching
● Repetitive avalanche capability for robustness and reliability
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International Rectifier
Trans MOSFET N-CH 250V 57A 3Pin(3+Tab) TO-247AC
International Rectifier
MOSFET N-CH 250V 57A TO247AC
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