| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 170 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.1 Ω |
| Polarity | N-CH |
| Power Dissipation | 170 W |
| Threshold Voltage | 5.5 V |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 24A |
| Rise Time | 32 ns |
| Input Capacitance (Ciss) | 1960pF @25V(Vds) |
| Input Power (Max) | 3.8 W |
| Fall Time | 16 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10 mm |
| Size-Width | 4.4 mm |
| Size-Height | 15.65 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFB23N20DPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
Infineon
12 Pages / 0.27 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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5 Pages / 0.04 MByte
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1 Pages / 0.14 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.1Ω; ID 24A; TO-220AB; PD 170W; VGS +/-30V
International Rectifier
MOSFET N-CH 200V 24A TO-220AB
IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.1Ω, Id=24A)
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