TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 40.0 V |
Current Rating | 170 A |
Case/Package | TO-263-3 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 3.6 mΩ |
Polarity | N-Channel |
Power Dissipation | 200 W |
Part Family | IRF2204S |
Threshold Voltage | 4 V |
Input Capacitance | 5890pF @25V |
Drain to Source Voltage (Vds) | 40 V |
Continuous Drain Current (Ids) | 170 A |
Rise Time | 140 ns |
Input Capacitance (Ciss) | 5890pF @25V(Vds) |
Input Power (Max) | 200 W |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Rail, Tube |
Size-Length | 10.67 mm |
Size-Height | 4.576 mm |
Operating Temperature | -55℃ ~ 175℃ |
Description
●This HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
●Features
●• Advanced Process Technology
●• Ultra Low On-Resistance
●• Dynamic dv/dt Rating
●• 175°C Operating Temperature
●• Fast Switching
●• Repetitive Avalanche Allowed up to Tjmax
●• Lead-Free
●Typical Applications
●• Industrial Motor Drive
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