| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Case/Package | TO-204 |
| Number of Positions | 2 Position |
| Drain to Source Resistance (on) (Rds) | 400 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 75 W |
| Part Family | IRF230 |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 9.00 A |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Weight | 0.01 kg |
| Operating Temperature | -55℃ ~ 150℃ |
200 Volt, 0.40Ω HEXFET
●HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transis tors. The efficient geometry achieves very low on state resistance combined with high transconductance.
●HEXFET transistors also feature all of the well-es tablish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits, and virtu ally any application where high reliability is required.
●Features:
●■ Avalanche Energy Rating
●■ Dynamic dv/dt Rating
●■ Simple Drive Requirements
●■ Ease of Paralleling
●■ Hermetically Sealed
International Rectifier
7 Pages / 0.14 MByte
International Rectifier
1 Pages / 0.12 MByte
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