| TYPE | DESCRIPTION |
|---|
| Number of Pins | 2 Pin |
| Case/Package | TO-204 |
| Number of Positions | 2 Position |
| Drain to Source Resistance (on) (Rds) | 0.085 Ω |
| Power Dissipation | 150 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 200 V |
| Rise Time | 190 ns |
| Input Capacitance (Ciss) | 3500pF @25V(Vds) |
| Fall Time | 130 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Operating Temperature | -55℃ ~ 150℃ |
The IRF250 is a 200V single N-channel HEXFET® MOSFET hermetically sealed with extremely low on-resistance with high transconductance, superior reverse energy and diode recovery dv/dt capability using Hi-Rel technology.
● Simple drive requirement
● Repetitive avalanche rating
● Easy to parallel
Infineon
7 Pages / 0.14 MByte
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