| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Drain to Source Resistance (on) (Rds) | 2.4 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 231 W |
| Part Family | IRF2903ZS |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 260 A |
| Rise Time | 100 ns |
| Input Capacitance (Ciss) | 6320pF @25V(Vds) |
| Input Power (Max) | 231 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
●N-Channel Power MOSFET over 100A, Infineon
●The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
12 Pages / 0.33 MByte
International Rectifier
13 Pages / 0.4 MByte
International Rectifier
MOSFET 30V 1 N-CH HEXFET 2.4mOhms 160NC
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 2.4Milliohms; ID 260A; TO-220AB; PD 290W; -55de
International Rectifier
MOSFET MOSFT 30V 260A 2.4mOhm 160NC Qg
International Rectifier
Trans MOSFET N-CH 30V 260A 3Pin (3+Tab) TO-220AB
International Rectifier
Trans MOSFET N-CH Si 75V 170A 3Pin(3+Tab) TO-262
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
