| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 75.0 V |
| Current Rating | 62.0 A |
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 12.6 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 120 W |
| Part Family | IRF3007S |
| Input Capacitance | 3270pF @25V |
| Drain to Source Voltage (Vds) | 75 V |
| Continuous Drain Current (Ids) | 62.0 A |
| Rise Time | 80.0 ns |
| Input Capacitance (Ciss) | 3270pF @25V(Vds) |
| Input Power (Max) | 120 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Height | 4.576 mm |
| Operating Temperature | -55℃ ~ 175℃ |
Description
●Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
●Typical Applications
●42 Volts Automotive Electrical Systems
●Lead-Free
●Features
●Ultra Low On-Resistance
●175°C Operating Temperature
●Fast Switching
●Repetitive Avalanche Allowed up to Tjmax
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