TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Power Rating | 79 W |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 7.8 mΩ |
Polarity | N-Channel |
Power Dissipation | 79 W |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30 V |
Continuous Drain Current (Ids) | 87A |
Rise Time | 41 ns |
Input Capacitance (Ciss) | 2130pF @15V(Vds) |
Fall Time | 4.7 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 79W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10 mm |
Size-Width | 4.4 mm |
Size-Height | 8.77 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Industry-leading quality
● Low RDS(ON) at 4.5V VGS
● Fully Characterized Avalanche Voltage and Current
● Ultra-Low Gate Impedance
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International Rectifier
MOSFET N-CH 30V 90A TO-220AB
IRF
Power MOSFET(Vdss=30V, Rds(on)max=9mohm, Id=90A)
International Rectifier
Trans MOSFET N-CH 30V 90A 3Pin(2+Tab) D2PAK Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 6.4Milliohms; ID 90A; D2Pak; PD 120W; VGS +/-20
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