| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | PQFN-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0014 Ω |
| Polarity | N-CH |
| Power Dissipation | 125 W |
| Threshold Voltage | 3.7 V |
| Drain to Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Ids) | 201A |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 5406pF @25V(Vds) |
| Fall Time | 34 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 125000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6 mm |
| Size-Width | 5 mm |
| Size-Height | 0.83 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Benefits:
● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
● Fully Characterized Capacitance and Avalanche SOA
● Enhanced body diode dV/dt and dI/dt Capability
● Lead-Free, RoHS Compliant
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