| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 540 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 3.7 W |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 5.60 A |
| Rise Time | 16 ns |
| Input Capacitance (Ciss) | 180pF @25V(Vds) |
| Fall Time | 9.4 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3700 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 175℃ |
| Minimum Packing Quantity | 2000 |
VISHAY
10 Pages / 0.34 MByte
VISHAY
8 Pages / 0.17 MByte
VISHAY
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
Intersil
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54Ω, ID = 5.6A
Vishay Siliconix
MOSFET N-CH 100V 5.6A TO-220AB
Fairchild
Trans MOSFET N-CH 100V 5.6A 3Pin (3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
VISHAY
TO-220-3 N-CH 100V 5.6A 540mΩ
VISHAY
TO-252-3 N-CH 100V 5.6A 540mΩ
International Rectifier
Transistor MOSFET N Channel 100V 5.6A 3Pin 3+ Tab TO-220AB
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ω; ID 5.6A; TO-220AB; PD 43W; VGS +/-20V
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