| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 48 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.2 Ω |
| Polarity | N-Channel |
| Power Dissipation | 48 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 330pF @25V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 9.7A |
| Rise Time | 23 ns |
| Input Capacitance (Ciss) | 330pF @25V(Vds) |
| Fall Time | 23 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 48W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.54 mm |
| Size-Width | 4.69 mm |
| Size-Height | 8.77 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Dynamic dv/dt rating
● Fully avalanche rated
● Advanced process technology
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