| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Polarity | N-CH |
| Power Dissipation | 3.8W (Ta), 70W (Tc) |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 17A |
| Rise Time | 22 ns |
| Input Capacitance (Ciss) | 920pF @25V(Vds) |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.8W (Ta), 70W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
Infineon
11 Pages / 0.59 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
VISHAY
Trans MOSFET N-CH 100V 14A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 100V 14A 3Pin(3+Tab) TO-220AB
ST Microelectronics
Trans MOSFET N-CH 100V 14A 3Pin(3+Tab) TO-220
International Rectifier
MOSFET N-CH 100V 14A TO-220
Vishay Siliconix
MOSFET N-CH 100V 14A TO-220AB
ON Semiconductor
TMOS POWER FET 14 AMPERES, 100 VOLTS RDS(on) = 0.14Ω
Fairchild
Trans MOSFET N-CH Si 100V 14A 3Pin(3+Tab) TO-220AB
Harris
(IRF530 - IRF533) N-Channel Power MOSFETs Avalanche Energy Rated
Motorola
N-channel MOSFET, 60V, 14A
Infineon
Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
