| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | TSOT-23-6 |
| Power Rating | 2 W |
| Number of Channels | 1 Channel |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 1.2 Ω |
| Polarity | N-CH |
| Power Dissipation | 2 W |
| Threshold Voltage | 5.5 V |
| Input Capacitance | 88 pF |
| Drain to Source Voltage (Vds) | 150 V |
| Breakdown Voltage (Drain to Source) | 150 V |
| Continuous Drain Current (Ids) | 0.9A |
| Rise Time | 1.6 ns |
| Input Capacitance (Ciss) | 88pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 9.2 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.5 mm |
| Size-Height | 0.9 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF5802TRPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters, DC switches and load switch.
● Fully characterized avalanche voltage and current
● Fully characterized capacitance including effective COSS to simplify design
● Halogen-free
Infineon
8 Pages / 0.2 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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5 Pages / 0.32 MByte
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2 Pages / 0.09 MByte
International Rectifier
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Trans MOSFET N-CH 150V 0.9A 6Pin TSOP T/R
International Rectifier
Trans MOSFET N-CH 150V 0.9A 6Pin TSOP T/R
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