| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 3.3A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
General Description
●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
●Features
●• 3.3A, 200V, RDS(on)= 1.5Ω@VGS= 10 V
●• Low gate charge ( typical 7.2 nC)
●• Low Crss ( typical 6.8 pF)
●• Fast switching
●• 100% avalanche tested
●• Improved dv/dt capability
Fairchild
10 Pages / 0.84 MByte
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