| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 7 Pin |
| Case/Package | Direct-FET |
| Power Rating | 89 W |
| Number of Channels | 1 Channel |
| Number of Positions | 7 Position |
| Drain to Source Resistance (on) (Rds) | 0.009 Ω |
| Polarity | N-Channel |
| Power Dissipation | 89 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Continuous Drain Current (Ids) | 13.4A |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 1350pF @25V(Vds) |
| Fall Time | 8.7 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 40 ℃ |
| Power Dissipation (Max) | 3.6W (Ta), 89W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.35 mm |
| Size-Width | 5.05 mm |
| Size-Height | 0.7 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
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A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 67 amperes optimized with low on resistance.
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