| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | Direct-FET |
| Power Rating | 32 W |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.0028 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.1 W |
| Threshold Voltage | 1.6 V |
| Drain to Source Voltage (Vds) | 25 V |
| Continuous Drain Current (Ids) | 19A |
| Rise Time | 19 ns |
| Input Capacitance (Ciss) | 1590pF @13V(Vds) |
| Input Power (Max) | 2.1 W |
| Fall Time | 5.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 2.1W (Ta), 32W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 4.85 mm |
| Size-Width | 3.95 mm |
| Size-Height | 0.7 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● 100% Rg tested
● Low Profile (less than 0.7 mm)
● Dual Sided Cooling
● Optimized for Control FET Applications
● Low Conduction Losses
● Optimized for High Frequency Switching
● Low Package Inductance
Infineon
20 Pages / 0.44 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
3 Pages / 0.19 MByte
International Rectifier
Trans MOSFET N-CH 25V 19A 6Pin Direct-FET SQ T/R
International Rectifier
MOSFET 25V 1 N-CH HEXFET 3.7mOhms 11NC
Infineon
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 19 amperes optimized with low on resistance.
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