| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 0.025 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2.5 W |
| Part Family | IRF7240 |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Ids) | -10.5 A |
| Input Capacitance (Ciss) | 9250pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ |
●P-Channel Power MOSFET over 8A, Infineon
●Infineon"s range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
9 Pages / 0.11 MByte
International Rectifier
4 Pages / 0.19 MByte
International Rectifier
-40V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.015Ω; ID -10.5A; SO-8; PD 2.5W; VGS +/-20V
International Rectifier
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.015Ω; ID -10.5A; SO-8; PD 2.5W; VGS +/-20V
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
