TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 2.5 W |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.015 Ω |
Polarity | P-Channel |
Power Dissipation | 2.5 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 40 V |
Breakdown Voltage (Drain to Source) | 40 V |
Continuous Drain Current (Ids) | 10.5A |
Rise Time | 490 ns |
Input Capacitance (Ciss) | 9250pF @25V(Vds) |
Fall Time | 97 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not For New Designs |
Packaging | Tube |
Material | Silicon |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7240PBF is a -40V single P-channel MOSFET utilizes advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The package has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering techniques.
● Ultra low on-resistance
● P-channel MOSFET
● Surface mount
Infineon
9 Pages / 0.11 MByte
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270 Pages / 11.59 MByte
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27 Pages / 0.3 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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3 Pages / 0.04 MByte
International Rectifier
-40V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.015Ω; ID -10.5A; SO-8; PD 2.5W; VGS +/-20V
International Rectifier
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.015Ω; ID -10.5A; SO-8; PD 2.5W; VGS +/-20V
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