| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Current Rating | 4.00 A |
| Case/Package | SOIC-8 |
| Drain to Source Resistance (on) (Rds) | 50 mΩ |
| Polarity | N-Channel, P-Channel |
| Power Dissipation | 1.4 W |
| Part Family | IRF7309 |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Continuous Drain Current (Ids) | 4.70 A |
| Thermal Resistance | 62.5 K/W |
| Input Capacitance (Ciss) | 520pF @15V(Vds) |
| Input Power (Max) | 1.4 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Operating Temperature | -55℃ ~ 150℃ |
Description
●Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications.
● Generation V Technology
● Ultra Low On-Resistance
● Dual N and P Channel Mosfet
● Surface Mount
● Available in Tape & Reel
● Dynamic dv/dt Rating
● Fast Switching
● Lead-Free
International Rectifier
11 Pages / 2.01 MByte
International Rectifier
11 Pages / 2.04 MByte
International Rectifier
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
Trans MOSFET N/P-CH 30V 4A/3A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N/P-CH 30V 4A/3A 8Pin SOIC Tube
International Rectifier
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
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