TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Current Rating | 6.60 A |
Case/Package | SOIC-8 |
Polarity | N-Channel, P-Channel |
Power Dissipation | 2 W |
Part Family | IRF7317 |
Drain to Source Voltage (Vds) | 20 V |
Breakdown Voltage (Drain to Source) | 20.0 V |
Continuous Drain Current (Ids) | 6.60 A |
Thermal Resistance | 62.5 K/W |
Input Capacitance (Ciss) | 900pF @15V(Vds) |
Input Power (Max) | 2 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
Size-Length | 5 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ |
●Dual N/P-Channel Power MOSFET, Infineon
●Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
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