| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2 W |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.05 Ω |
| Polarity | N+P |
| Power Dissipation | 2 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55 V |
| Continuous Drain Current (Ids) | 4.7A/3.4A |
| Thermal Resistance | 62.5℃/W (RθJA) |
| Input Capacitance (Ciss) | 740pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not For New Designs |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7343PBF is a 55V dual N-channel and P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● Surface mount
● Dynamic dV/dt rating
● Fully avalanche rated
Infineon
10 Pages / 0.21 MByte
Infineon
270 Pages / 11.59 MByte
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27 Pages / 0.31 MByte
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2 Pages / 0.17 MByte
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12 Pages / 0.68 MByte
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8 Pages / 0.11 MByte
International Rectifier
Trans MOSFET N/P-CH 55V 4.7A/3.4A 8Pin SOIC
International Rectifier
Trans MOSFET N/P-CH 55V 4.7A/3.4A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N/P-CH 55V 4.7A/3.4A 8Pin SOIC Tube
International Rectifier
Transistor: N/P-MOSFET x2; unipolar; HEXFET; 55V; 4.7A; 2W; SO8
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