TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 2.5 W |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.023 Ω |
Polarity | N+P |
Power Dissipation | 2.5 W |
Threshold Voltage | 1 V |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 7.3A/5.3A |
Input Capacitance (Ciss) | 650pF @25V(Vds) |
Input Power (Max) | 2.5 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2500 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7389TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
● Generation V technology
● Ultra low ON-resistance
● Complimentary half bridge
● Surface-mount device
● Fully avalanche rated
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N,P채널 HEXFET, Vd = 30V, Rds = 0.029Ω, Id = 7.3A, Vd = -30V, Rds = 0.058Ω, Id = -5.3A, SOIC8 패키지
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