TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 2.5 W |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.0075 Ω |
Polarity | N-Channel |
Power Dissipation | 2.5 W |
Threshold Voltage | 2 V |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 15A |
Rise Time | 18 ns |
Input Capacitance (Ciss) | 3480pF @25V(Vds) |
Input Power (Max) | 2.5 W |
Fall Time | 44 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not For New Designs |
Packaging | Tube |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7455PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Low gate to drain charge to reduce switching loss
● Fully characterized capacitance and avalanche SOA
Infineon
8 Pages / 1 MByte
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270 Pages / 11.59 MByte
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27 Pages / 0.3 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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3 Pages / 0.04 MByte
International Rectifier
MOSFET N-CH 30V 15A 8-SOIC
IRF
Power MOSFET(Vdss=30V, Rds(on)max=0.0071Ω,Id=15A)
International Rectifier
Trans MOSFET N-CH 30V 15A 8Pin SOIC T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.06Ω; ID 15A; SO-8; PD 2.5W; VGS +/-12V; gFS 4
International Rectifier
Trans MOSFET N-CH 30V 15A 8Pin SOIC T/R
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