| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0155 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Ids) | 9.4A |
| Rise Time | 2.3 ns |
| Input Capacitance (Ciss) | 2460pF @20V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 3.8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7468PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency DC-to-DC isolated converters with synchronous rectification for telecom use and high frequency buck converters.
● Ultra-low gate impedance
● Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
● Dynamic dV/dt rating
● Fast switching
● Fully avalanche rating
Infineon
8 Pages / 0.12 MByte
Infineon
270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
MOSFET N-CH 40V 9.4A 8-SOIC
IRF
Power MOSFET(Vdss=40V, Id=9.4A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 11.7 Milliohms; ID 9.4A; SO-8; PD 2.5W; VGS +/-1
International Rectifier
Trans MOSFET N-CH 40V 9.4A 8Pin SOIC Tube
International Rectifier
MOSFET N-CH 40V 9.4A 8-SOIC
Infineon
Trans MOSFET N-CH 40V 9.4A 8Pin SOIC T/R
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