TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 2.5 W |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.017 Ω |
Polarity | N-Channel |
Power Dissipation | 2.5 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 40 V |
Continuous Drain Current (Ids) | 9A |
Rise Time | 2.2 ns |
Input Capacitance (Ciss) | 2000pF @20V(Vds) |
Fall Time | 3.5 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Rail, Tube |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7469PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency DC-to-DC isolated converters with synchronous rectification for telecom use and high frequency buck converters.
● Ultra-low gate impedance
● Very low static drain-to-source ON-resistance
● Dynamic dV/dt rating
● Fast switching
● Fully avalanche rating
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8 Pages / 0.12 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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40V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
40V Single N-Channel HEXFET Power MOSFET in a SO-8 package
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