| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.013 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 40 V |
| Operating Temperature (Max) | 150 ℃ |
The IRF7470PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency DC-to-DC converters with synchronous rectification.
● Ultra-low gate impedance
● Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
● Dynamic dV/dt rating
● Fast switching
● Fully avalanche rating
Infineon
1 Pages / 0.71 MByte
Infineon
8 Pages / 0.12 MByte
International Rectifier
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Infineon
INFINEON IRF7470.PBF MOSFET Transistor, N Channel, 10A, 40V, 13mohm, 10V, 2V
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