| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 10 Pin |
| Case/Package | Direct-FET |
| Number of Positions | 8 Position |
| Polarity | N-Channel |
| Power Dissipation | 96 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Ids) | 217A |
| Rise Time | 70 ns |
| Input Capacitance (Ciss) | 6680pF @25V(Vds) |
| Fall Time | 58 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 96W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
● Fully Characterized Capacitance and Avalanche SOA
● Enhanced body diode dV/dt and dI/dt Capability
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12 Pages / 0.5 MByte
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44 Pages / 3.69 MByte
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37 Pages / 2.01 MByte
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5 Pages / 0.32 MByte
International Rectifier
Trans MOSFET N-CH 40V 217A 10Pin Direct-FET ME T/R
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40V Single N-Channel HEXFET Power MOSFET in a DirectFET ME package
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