| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 17.0 A |
| Case/Package | SOIC |
| Drain to Source Resistance (on) (Rds) | 7.00 MΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.50 W |
| Part Family | IRF7809AV |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0V (min) |
| Continuous Drain Current (Ids) | 13.3 A |
| Rise Time | 36.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
Description
●This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.
●• N-Channel Application-Specific MOSFETs
●• Ideal for CPU Core DC-DC Converters
●• Low Conduction Losses
●• Low Switching Losses
●• Minimizes Parallel MOSFETs for high current applications
●• 100% Tested for RG
International Rectifier
8 Pages / 0.21 MByte
International Rectifier
8 Pages / 0.19 MByte
Infineon
MOSFET N-CH 30V 17.6A 8-SOIC
International Rectifier
Trans MOSFET N-CH 30V 13.3A 8Pin SOIC Tube
International Rectifier
Trans MOSFET N-CH 30V 13.3A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 13.3A 8Pin SOIC
International Rectifier
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
