| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0086 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 2.25 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 7.6A/11A |
| Input Capacitance (Ciss) | 910pF @15V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.4 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Mosfet Array 2 N-Channel (Dual) 30V 7.6A, 11A 1.4W, 2W Surface Mount 8-SO
Infineon
10 Pages / 0.24 MByte
Infineon
5 Pages / 0.08 MByte
Infineon
1 Pages / 0.13 MByte
International Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
Trans MOSFET N-CH 30V 7.6A/11A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 7.6A/11A 8Pin SOIC Tube
Infineon
30V Dual N Channel HEXFET Power MOSFET in a SO-8 package
Infineon
30V Dual N Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer markets
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
