TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 2 W |
Number of Channels | 2 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.015 Ω |
Polarity | Dual N-Channel |
Power Dissipation | 2 W |
Threshold Voltage | 2 V |
Drain to Source Voltage (Vds) | 12 V |
Breakdown Voltage (Drain to Source) | 12 V |
Continuous Drain Current (Ids) | 10A |
Rise Time | 22 ns |
Input Capacitance (Ciss) | 1730pF @6V(Vds) |
Input Power (Max) | 2 W |
Fall Time | 6.3 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tube |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7910PBF is a dual N-channel MOSFET designed for high frequency 3.3 and 5V input point-of-load synchronous buck converters for Netcom and computing applications.
● Ultra-low gate impedance
● Very low RDS (ON)
● Fully characterized avalanche voltage and current
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