| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 49 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 65 ns |
| Input Power (Max) | 49 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 49000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.38 mm |
| Operating Temperature | 175℃ (TJ) |
This NGTB03N60R2DT4G IGBT transistor from ON Semiconductor is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 49000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single dual collector configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
ON Semiconductor
8 Pages / 0.57 MByte
ON Semiconductor
11 Pages / 3.63 MByte
ON Semiconductor
Trans IGBT Chip N-CH 600V 9A 49000mW 3Pin(2+Tab) DPAK T/R
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