| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 7 Pin |
| Case/Package | Direct-FET |
| Power Rating | 89 W |
| Number of Positions | 7 Position |
| Drain to Source Resistance (on) (Rds) | 0.0013 Ω |
| Polarity | N-Channel |
| Power Dissipation | 89 W |
| Threshold Voltage | 1.7 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 34A |
| Rise Time | 30 ns |
| Input Capacitance (Ciss) | 6140pF @15V(Vds) |
| Fall Time | 17 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.35 mm |
| Size-Width | 5.05 mm |
| Size-Height | 0.7 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
Benefits:
● Ultra-low RDS(on)
● Low Profile (less than 0.7 mm)
● Dual Sided Cooling Compatible
● Ultra-low Package Inductance
● Optimized for high speed switching or high current switch (Power Tool)
● Low Conduction and Switching Losses
● Compatible with existing Surface Mount Techniques
● StrongIRFET™
Infineon
10 Pages / 0.33 MByte
Infineon
270 Pages / 11.59 MByte
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44 Pages / 3.69 MByte
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2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.19 MByte
International Rectifier
Trans MOSFET N-CH 30V 34A 7Pin Direct-FET MT T/R
Infineon
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance.
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