| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 300 mA |
| Case/Package | SC-70-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1 Ω |
| Polarity | N-Channel |
| Power Dissipation | 150 mW |
| Threshold Voltage | 1.7 V |
| Input Capacitance | 45.0 pF |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 300 mA |
| Rise Time | 2.5 ns |
| Input Capacitance (Ciss) | 45pF @5V(Vds) |
| Input Power (Max) | 150 mW |
| Fall Time | 0.8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.1 mm |
| Size-Width | 1.24 mm |
| Size-Height | 0.85 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The MMBF2201NT1G is a N-channel miniature surface-mount Power MOSFET with low RDS (ON) assure minimal power loss and conserve energy. The device is ideal for use in space sensitive power management circuitry. It is suitable for DC-to-DC converters, power management in portable and battery-powered products such as printers, PCMCIA cards, cellular and cordless telephones.
● Low RDS (ON) provides higher efficiency and extends battery life
● Miniature surface-mount package saves board space
● -55 to 150°C Operating temperature range
ON Semiconductor
4 Pages / 0.09 MByte
ON Semiconductor
5 Pages / 0.16 MByte
ON Semiconductor
2 Pages / 0.11 MByte
ON Semiconductor
8 Pages / 0.06 MByte
ON Semiconductor
1 Pages / 0.15 MByte
Motorola
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
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