TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 7 Pin |
Case/Package | Direct-FET |
Polarity | N-CH |
Power Dissipation | 2.8 W |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 31A |
Rise Time | 37 ns |
Input Capacitance (Ciss) | 6030pF @15V(Vds) |
Input Power (Max) | 2.8 W |
Fall Time | 15 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 2.8W (Ta), 104W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | -40℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● Low Profile (less than 0.7 mm)
● Dual Sided Cooling
● Low Conduction Losses
● Optimized for High Frequency Switching
● Low Package Inductance
● Integrated Monolithic Sckottky Diode
Infineon
9 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
International Rectifier
Trans MOSFET N-CH 30V 31A 7Pin Direct-FET MX T/R
International Rectifier
Trans MOSFET N-CH 30V 31A 7Pin Direct-FET MX T/R
Infineon
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance.
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