TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | SOIC-8 |
Power Rating | 2.5 W |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 119 mΩ |
Polarity | N-CH |
Power Dissipation | 2.5 W |
Threshold Voltage | 1.8 V |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30 V |
Continuous Drain Current (Ids) | 11A |
Input Capacitance (Ciss) | 760pF @15V(Vds) |
Operating Temperature (Max) | 150 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tube |
Size-Length | 4.9 mm |
Size-Width | 3.9 mm |
Size-Height | 1.75 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO
Infineon
9 Pages / 0.24 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
10 Pages / 0.23 MByte
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Infineon
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
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International Rectifier
Trans MOSFET N-CH 30V 11A 8Pin SOIC
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