| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.01 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 1.8 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 13A |
| Rise Time | 6.3 ns |
| Input Capacitance (Ciss) | 1210pF @15V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 3.8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7413ZPBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. The control and synchronous rectifier MOSFET is suitable for graphics cards and POL converters in telecommunication systems.
● Ultra-low gate impedance
● Very low static drain-to-source ON-resistance
● 100% Tested for gate resistance
Infineon
10 Pages / 0.27 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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12 Pages / 0.56 MByte
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MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 8 Milliohms; ID 13A; SO-8; PD 2.5W; VGS +/-20V
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