TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 2.5 W |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.0054 Ω |
Polarity | P-Channel |
Power Dissipation | 2.5 W |
Threshold Voltage | 1.8 V |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 16A |
Rise Time | 64 ns |
Input Capacitance (Ciss) | 2820pF @15V(Vds) |
Fall Time | 120 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Discontinued at Digi-Key |
Packaging | Tube |
Size-Length | 4.98 mm |
Size-Width | 3.99 mm |
Size-Height | 1.57 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF9317PBF is a -30V single P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology.
● Environmentally-friendly
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-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
Trans MOSFET P-CH 30V 16A 8Pin SOIC N T/R
International Rectifier
Trans MOSFET P-CH 30V 16A 8Pin SOIC N Tube
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