TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 2 W |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.017 Ω |
Polarity | P-Channel |
Power Dissipation | 2 W |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 8A |
Rise Time | 5.9 ns |
Input Capacitance (Ciss) | 1300pF @25V(Vds) |
Input Power (Max) | 2 W |
Fall Time | 53 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF9362PBF is a HEXFET® dual P-channel Power MOSFET for use with charge and discharge switch for notebook PC battery applications. It is compatible with existing surface-mount techniques.
● Industry standard package for multi-vendor compatibility
● Halogen-free
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