TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 1.5 W |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.0059 Ω |
Polarity | P-Channel |
Power Dissipation | 2.5 W |
Threshold Voltage | 1.8 V |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 15A |
Input Capacitance (Ciss) | 2590pF @25V(Vds) |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Size-Length | 4.98 mm |
Size-Width | 3.99 mm |
Size-Height | 1.57 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF9321PBF is a -30V single P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology.
● Environmentally-friendly
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8 Pages / 0.26 MByte
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270 Pages / 11.59 MByte
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27 Pages / 0.3 MByte
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37 Pages / 2.01 MByte
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12 Pages / 0.56 MByte
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-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
Trans MOSFET P-CH 30V 15A 8Pin SOIC N T/R
International Rectifier
Trans MOSFET P-CH 30V 15A 8Pin SOIC N Tube
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