TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 7 Pin |
Case/Package | Direct-FET |
Number of Channels | 2 Channel |
Polarity | P-Channel |
Power Dissipation | 2.1 W |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 22A |
Rise Time | 160 ns |
Input Capacitance (Ciss) | 7305pF @15V(Vds) |
Fall Time | 110 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 2.1W (Ta), 113W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.35 mm |
Size-Width | 5.05 mm |
Size-Height | 0.7 mm |
Operating Temperature | -40℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● P-Channel MOSFET
● Low Profile (less than 0.7 mm)
● Dual Sided Cooling
Infineon
10 Pages / 0.23 MByte
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A -30V Single P-Channel HEXFET Power MOSFET in a DirectFET MX package rated at -160 amperes optimized with low on resistance.
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