| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 10 Pin |
| Case/Package | Direct-FET |
| Number of Channels | 2 Channel |
| Polarity | P-CH |
| Power Dissipation | 2.1 W |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 14A |
| Rise Time | 142 ns |
| Input Capacitance (Ciss) | 3241pF @15V(Vds) |
| Input Power (Max) | 2.1 W |
| Fall Time | 121 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 2100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Width | 5.05 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Dual P-Channel MOSFET
● Low Profile (less than 0.7 mm)
● Dual Sided Cooling
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T&R; / Dual MOSFET, P-CHANNEL, -30V, -47A, 7MOhm, -4.5V Capable, M-Can Direct FET
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A -30V Dual P-Channel HEXFET Power MOSFET in a DirectFET MC package rated at -14 amperes optimized with low on resistance
International Rectifier
Directfetdual P-channel Power Mosfet
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