| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.60 kV |
| Current Rating | 33.0 A |
| Case/Package | TO-247-3 |
| Polarity | N-Channel |
| Power Dissipation | 350 W |
| Rise Time | 60.0 ns |
| Breakdown Voltage (Collector to Emitter) | 1600 V |
| Input Power (Max) | 350 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 350000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
You can use this IXBH40N160 IGBT transistor from Ixys Corporation as an electronic switch. It has a maximum collector emitter voltage of 1600 V. Its maximum power dissipation is 350000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
IXYS Semiconductor
4 Pages / 0.07 MByte
IXYS Semiconductor
5 Pages / 0.05 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 1600V 33A 350000mW 3Pin(3+Tab) TO-247AD
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